Solved Problems: Semiconducting Materials
2.6 Carrier densities
1D doped semiconductors
SOLVED: (a) The maximum intrinsic carrier concentration in a silicon device must be limited to 5 × 10^11 cm^-3 . Assume Eg=1.12 eV. Determine the maximum temperature allowed for the device. (
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Solved Problems: Semiconducting Materials
2.6 Carrier densities
Carrier concentration temperature dependence; semiconductors | Physics Forums
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2.2.2 Doping and Carrier Density
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![Semiconductor intrinsic carrier concentration versus temperature [18]... | Download Scientific Diagram](https://www.researchgate.net/profile/Ahmad-Hassan-14/publication/329489928/figure/fig1/AS:701410568048640@1544240719077/Semiconductor-intrinsic-carrier-concentration-versus-temperature-18-At-applied-voltage_Q640.jpg "Semiconductor intrinsic carrier concentration versus temperature [18]... | Download Scientific Diagram")
Semiconductor intrinsic carrier concentration versus temperature [18]... | Download Scientific Diagram
Solved Problems: Semiconducting Materials
